Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition

Type:
Journal
Info:
Applied Surface Science 365 (2016) 160 - 165
Date:
2016-01-07
DOI:
http://dx.doi.org/10.1016/j.apsusc.2016.01.038

Author Information

Name Institution
Yujin JangYeungnam University
Seungmin YeoYonsei University
Han-Bo-Ram LeeIncheon National University
Hyungjun KimYonsei University
Soo-Hyun KimYeungnam University

Films

Plasma MoS2

Hardware used: Unknown
Molybdenum hexacarbonyl, Mo(CO)6
CAS#: 13939-06-5
Where to buy precursor
H2S, Hydrogen Sulfide
CAS#: 7783-06-4
Deposition Temperature Range = 175-225C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

SiO2

Notes

617