Publication Information

Title: Plasma enhanced atomic layer deposition of aluminum sulfide thin films

Type: Journal

Info: Journal of Vacuum Science & Technology A 36, 01A113 (2018)

Date: 2017-11-08

DOI: http://dx.doi.org/10.1116/1.5003339

Author Information

Name

Institution

Ghent University

Ghent University

Ghent University

Films

Plasma AlS using Custom ICP

Deposition Temperature Range = 90-350C

75-24-1

7783-06-4

7440-37-1

Plasma AlS using Custom ICP

Deposition Temperature Range = 90-350C

75-24-1

7783-06-4

1333-74-0

Thermal AlS using Custom ICP

Deposition Temperature = 90C

75-24-1

7783-06-4

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000

Refractive Index

Ellipsometry

J.A. Woollam M-2000

Extinction Coefficient

Ellipsometry

J.A. Woollam M-2000

Thickness

XRR, X-Ray Reflectivity

Bruker D8 Discover

Plasma Species

OES, Optical Emission Spectroscopy

Ocean Optics QE Pro

Gas Phase Species

QMS, Quadrupole Mass Spectrometer

Hiden HPR-30

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo VG-Scientific theta probe

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Bruker D8 Discover

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

-

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

-

Substrates

SiO2

Micropillar Arrays

Keywords

Notes

1045



Shortcuts



© 2014-2019 plasma-ald.com