Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment

Type:
Journal
Info:
Journal of Semiconductors (2019) 40, 012806
Date:
2018-11-28

Author Information

Name Institution
Hui HaoTaiyuan University of Technology
Xiao ChenChinese Academy of Sciences
Zhengcheng LiChinese Academy of Sciences
Yang ShenChinese Academy of Sciences
Hu WangChinese Academy of Sciences
Yanfei ZhaoChinese Academy of Sciences
Rong HuangChinese Academy of Sciences
Tong LiuChinese Academy of Sciences
Jian LiangTaiyuan University of Technology
Yuxin AnChinese Academy of Sciences
Qing PengChinese Academy of Sciences
Sunan DingChinese Academy of Sciences

Films

Plasma Ga2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Substrates

Si(100)
GaN

Keywords

Notes

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