Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
Type:
Journal
Info:
Journal of Semiconductors (2019) 40, 012806
Date:
2018-11-28
Author Information
Name | Institution |
---|---|
Hui Hao | Taiyuan University of Technology |
Xiao Chen | Chinese Academy of Sciences |
Zhengcheng Li | Chinese Academy of Sciences |
Yang Shen | Chinese Academy of Sciences |
Hu Wang | Chinese Academy of Sciences |
Yanfei Zhao | Chinese Academy of Sciences |
Rong Huang | Chinese Academy of Sciences |
Tong Liu | Chinese Academy of Sciences |
Jian Liang | Taiyuan University of Technology |
Yuxin An | Chinese Academy of Sciences |
Qing Peng | Chinese Academy of Sciences |
Sunan Ding | Chinese Academy of Sciences |
Films
Plasma Ga2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Substrates
Si(100) |
GaN |
Notes
1552 |