Publication Information

Title: Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 62, No. 8, pp. 1143--1149

Date: 2013-05-08

DOI: http://dx.doi.org/10.3938/jkps.62.1143

Author Information

Name

Institution

Jeju National University

Jeju National University

Jeju National University

Jeju National University

Chonbuk National University

Jeju National University

Films

Plasma SiCOH using Unknown

Deposition Temperature Range N/A

1112-39-6

7440-37-1

Plasma SiCOH using Unknown

Deposition Temperature Range N/A

1112-39-6

7440-37-1

286-20-4

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Refractive Index

Ellipsometry

Gaertner L116D

Thickness

SEM, Scanning Electron Microscopy

JEOL JSM-6701F

Images

SEM, Scanning Electron Microscopy

JEOL JSM-6701F

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Bruker IR Spectrometer

Substrates

Silicon

Keywords

Notes

I am not exactly sure what is going on in the process described in the paper.

614



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