Publication Information

Title:
Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Thin Solid Films 446 (2004) 227 - 231
Date:
2003-09-05

Author Information

Name Institution
Yong Ju LeeKorea Advanced Institute of Science and Technology
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy

Substrates

Si(100)

Keywords

Notes

1236