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Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Thin Solid Films 446 (2004) 227 - 231
Date:
2003-09-05
Author Information
| Name | Institution |
|---|---|
| Yong Ju Lee | Korea Advanced Institute of Science and Technology |
| Sang-Won Kang | Korea Advanced Institute of Science and Technology |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Profilometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Substrates
| Si(100) |
Notes
| 1236 |