AlCl3, Aluminum Trichloride, CAS# 7446-70-0

Informational Websites

NumberWebsite
1http://webbook.nist.gov/cgi/cbook.cgi?ID=7446-70-0

Where to buy

NumberVendorRegionLink
1TCIπŸ‡ΊπŸ‡ΈAluminum(III) Chloride
2Sigma-Aldrich, Co. LLCπŸ‡ΊπŸ‡ΈAluminum chloride anhydrous, powder, 99.999% trace metals basis
3Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈAluminum chloride, anhydrous (99.99+%-Al) PURATREM
4EreztechπŸ‡ΊπŸ‡ΈAluminum chloride
5DOCK/CHEMICALSπŸ‡©πŸ‡ͺAluminumtrichloride
6Alfa AesarπŸ‡ΊπŸ‡ΈAluminum chloride, anhydrous, 99.999% (metals basis)
7Santa Cruz BiotechnologyπŸ‡ΊπŸ‡ΈAluminum chloride anhydrous

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 9 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Radical Enhanced Atomic Layer Deposition of Metals and Oxides
2Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
3Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
4Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
5Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
6Formation of aluminum nitride thin films as gate dielectrics on Si(100)
7Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
8Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
9Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition