Publication Information

Title:
Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
Type:
Journal
Info:
Applied Physics Letters 111, 141606 (2017)
Date:
2017-09-13

Author Information

Name Institution
Mikael BroasAalto University
Hua JiangAalto University
Andreas GraffFraunhofer Institute for Microstructure of Materials and Systems IMWS
Timo SajavaaraUniversity of Jyväskylä
Vesa VuorinenAalto University
Mervi Paulasto-KröckelAalto University

Films

Thermal Al2O3


Plasma AlN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Substrates

Si(100)

Keywords

Blistering

Notes

1071