Publication Information

Title: Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films

Type: Journal

Info: Applied Physics Letters 111, 141606 (2017)

Date: 2017-09-13

DOI: http://dx.doi.org/10.1063/1.4994974

Author Information

Name

Institution

Aalto University

Aalto University

Fraunhofer Institute for Microstructure of Materials and Systems IMWS

University of Jyväskylä

Aalto University

Aalto University

Films

Thermal Al2O3 using Beneq P400A

Deposition Temperature = 450C

75-24-1

7732-18-5

Plasma AlN using Picosun R200

Deposition Temperature = 500C

7446-70-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Plasmos SD 2300

Refractive Index

Ellipsometry

Plasmos SD 2300

Images

TEM, Transmission Electron Microscope

-

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku Smartlab

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

-

Substrates

Si(100)

Keywords

Blistering

Notes

1071



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