Publication Information

Title:
Formation of aluminum nitride thin films as gate dielectrics on Si(100)
Type:
Journal
Info:
Journal of Crystal Growth 266 (2004) 568 - 572
Date:
2004-03-04

Author Information

Name Institution
Yong Ju LeeLawrence Berkeley National Laboratory

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Substrates

Si(100)

Keywords

Notes

1235