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Formation of aluminum nitride thin films as gate dielectrics on Si(100)
Type:
Journal
Info:
Journal of Crystal Growth 266 (2004) 568 - 572
Date:
2004-03-04
Author Information
| Name | Institution |
|---|---|
| Yong Ju Lee | Lawrence Berkeley National Laboratory |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Substrates
| Si(100) |
Notes
| 1235 |