Publication Information

Title: Formation of aluminum nitride thin films as gate dielectrics on Si(100)

Type: Journal

Info: Journal of Crystal Growth 266 (2004) 568 - 572

Date: 2004-03-04

DOI: https://doi.org/10.1016/j.jcrysgro.2004.03.016

Author Information

Name

Institution

Lawrence Berkeley National Laboratory

Films

Deposition Temperature = 350C

7446-70-0

7664-41-7

7440-37-1

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

-

Interfacial Layer

TEM, Transmission Electron Microscope

JEOL 3010

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Electron Diffraction

JEOL 3010

Substrates

Si(100)

Keywords

Notes

1235



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