Publication Information

Title: Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma

Type: Journal

Info: Journal of Vacuum Science & Technology A 36, 021508 (2018)

Date: 2017-12-29

DOI: http://dx.doi.org/10.1116/1.5003381

Author Information

Name

Institution

Aalto University

Aalto University

Aalto University

Aalto University

University of Jyväskylä

Aalto University

Aalto University

Aalto University

Films

Thermal AlN using Picosun R200

Deposition Temperature = 475C

7446-70-0

7664-41-7

Plasma AlN using Picosun R200

Deposition Temperature = 425C

7446-70-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Stress

Wafer Curvature

Flexus 2320 Thin Film Stress Measurement System

Thickness

Ellipsometry

Plasmos SD 2300

Refractive Index

Ellipsometry

Plasmos SD 2300

Density

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MPD X-ray Diffractometer

Thickness

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MPD X-ray Diffractometer

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku Smartlab

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Compositional Depth Profiling

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Electron Diffraction

Unknown

Images

TEM, Transmission Electron Microscope

Unknown

Substrates

Si(100)

Keywords

Plasma vs Thermal Comparison

Notes

1067



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