Publication Information

Title:
Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 021508 (2018)
Date:
2017-12-29

Author Information

Name Institution
Ville RontuAalto University
Perttu SippolaAalto University
Mikael BroasAalto University
Glenn RossAalto University
Timo SajavaaraUniversity of Jyväskylä
Harri LipsanenAalto University
Mervi Paulasto-KröckelAalto University
Sami FranssilaAalto University

Films

Thermal AlN


Plasma AlN


Film/Plasma Properties

Characteristic: Stress
Analysis: Wafer Curvature

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Compositional Depth Profiling
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Substrates

Si(100)

Keywords

Plasma vs Thermal Comparison

Notes

1067