Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 021508 (2018)
Date:
2017-12-29
DOI:
http://dx.doi.org/10.1116/1.5003381

Author Information

Name Institution
Ville RontuAalto University
Perttu SippolaAalto University
Mikael BroasAalto University
Glenn RossAalto University
Timo SajavaaraUniversity of Jyväskylä
Harri LipsanenAalto University
Mervi Paulasto-KröckelAalto University
Sami FranssilaAalto University

Films

Thermal AlN

Hardware used: Picosun R200
AlCl3, Aluminum Trichloride
CAS#: 7446-70-0
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 475C

Plasma AlN

Hardware used: Picosun R200
AlCl3, Aluminum Trichloride
CAS#: 7446-70-0
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 425C

Film/Plasma Properties

Characteristic: Stress
Analysis: Wafer Curvature
Diagnostic: Flexus 2320 Thin Film Stress Measurement System

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Plasmos SD 2300

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Plasmos SD 2300

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku Smartlab

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Si(100)

Notes

1067