Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Applied Physics Letters 86, 071919 (2005)
Date:
2004-12-20
DOI:
http://dx.doi.org/10.1063/1.1861119

Author Information

Name Institution
Yong Ju LeeLawrence Berkeley National Laboratory
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma AlN

Hardware used: Custom Direct Capacitively Coupled Plasma
AlCl3, Aluminum Trichloride
CAS#: 7446-70-0
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 350C

Plasma TiN

Hardware used: Custom Direct Capacitively Coupled Plasma
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 350C

Plasma TiAlN

Hardware used: Custom Direct Capacitively Coupled Plasma
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
Where to buy precursor
AlCl3, Aluminum Trichloride
CAS#: 7446-70-0
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

NH3, Ammonia
CAS#: 7664-41-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: Tencor Alpha-Step Profilometer

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Substrates

SiO2

Notes

1183