Publication Information

Title: Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition

Type: Journal

Info: Applied Physics Letters 86, 071919 (2005)

Date: 2004-12-20

DOI: http://dx.doi.org/10.1063/1.1861119

Author Information

Name

Institution

Lawrence Berkeley National Laboratory

Korea Advanced Institute of Science and Technology

Films

Deposition Temperature = 350C

7446-70-0

1333-74-0

7664-41-7

Deposition Temperature = 350C

7550-45-0

1333-74-0

7727-37-9

Deposition Temperature = 350C

7550-45-0

7446-70-0

1333-74-0

7664-41-7

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Profilometry

Tencor Alpha-Step Profilometer

Thickness

TEM, Transmission Electron Microscope

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

-

Substrates

SiO2

Keywords

Oxidation Resistance

Notes

1183



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