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Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 50, No. 4, April 2007, pp. 1141-1146
Date:
2007-01-22
Author Information
| Name | Institution |
|---|---|
| Keunwoo Lee | Hanyang University |
| Keunjun Kim | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
| Youngjin Lee | Hynix Semiconductor |
| Jeongtae Kim | Hynix Semiconductor |
| Seungjin Yeom | Hynix Semiconductor |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Microstructure
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Substrates
| Si(100) |
Notes
| 1010 |