Publication Information

Title: Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 50, No. 4, April 2007, pp. 1141-1146

Date: 2007-01-22

DOI: http://dx.doi.org/10.3938/jkps.50.1141

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hynix Semiconductor

Hynix Semiconductor

Hynix Semiconductor

Films

Plasma Co using Custom

Deposition Temperature Range = 50-300C

12078-25-0

1333-74-0

Plasma Co using Custom

Deposition Temperature Range = 50-300C

12078-25-0

7440-37-1

1333-74-0

Plasma Co using Custom

Deposition Temperature Range = 50-300C

12078-25-0

7664-41-7

Plasma Co using Custom

Deposition Temperature Range = 50-300C

12078-25-0

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Thickness

TEM, Transmission Electron Microscope

-

Microstructure

TEM, Transmission Electron Microscope

-

Images

TEM, Transmission Electron Microscope

-

Thickness

SEM, Scanning Electron Microscopy

-

Microstructure

SEM, Scanning Electron Microscopy

-

Images

SEM, Scanning Electron Microscopy

-

Substrates

Si(100)

Keywords

Notes

1010



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