Publication Information

Title: Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 50, No. 4, April 2007, pp. 1141-1146

Date: 2007-01-22

DOI: http://dx.doi.org/10.3938/jkps.50.1141

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hynix Semiconductor

Hynix Semiconductor

Hynix Semiconductor

Films

Plasma Co using Custom

Deposition Temperature Range = 50-300C

12078-25-0

1333-74-0

Plasma Co using Custom

Deposition Temperature Range = 50-300C

12078-25-0

7440-37-1

1333-74-0

Plasma Co using Custom

Deposition Temperature Range = 50-300C

12078-25-0

7664-41-7

Plasma Co using Custom

Deposition Temperature Range = 50-300C

12078-25-0

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

Microstructure

TEM, Transmission Electron Microscope

Unknown

Images

TEM, Transmission Electron Microscope

Unknown

Thickness

SEM, Scanning Electron Microscopy

Unknown

Microstructure

SEM, Scanning Electron Microscopy

Unknown

Images

SEM, Scanning Electron Microscopy

Unknown

Substrates

Si(100)

Keywords

Notes

1010



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