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Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 50, No. 4, April 2007, pp. 1141-1146
Date:
2007-01-22
DOI:
http://dx.doi.org/10.3938/jkps.50.1141

Author Information

Name Institution
Keunwoo LeeHanyang University
Keunjun KimHanyang University
Hyeongtag JeonHanyang University
Youngjin LeeHynix Semiconductor
Jeongtae KimHynix Semiconductor
Seungjin YeomHynix Semiconductor

Films

Plasma Co

Hardware used: Custom
Dicarbonylcyclopentadienylcobalt, CpCo(CO)2
CAS#: 12078-25-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 50-300C

Plasma Co

Hardware used: Custom
Dicarbonylcyclopentadienylcobalt, CpCo(CO)2
CAS#: 12078-25-0
Ar, Argon
CAS#: 7440-37-1
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 50-300C

Plasma Co

Hardware used: Custom
Dicarbonylcyclopentadienylcobalt, CpCo(CO)2
CAS#: 12078-25-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 50-300C

Plasma Co

Hardware used: Custom
Dicarbonylcyclopentadienylcobalt, CpCo(CO)2
CAS#: 12078-25-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 50-300C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Microstructure
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

Si(100)

Notes

1010