Publication Information

Title: Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects

Type: Conference Proceedings

Info: ECS Transactions, 33 (2) 169-176 (2010)

Date: 2010-07-08

DOI: http://dx.doi.org/10.1149/1.3485253

Author Information

Name

Institution

Applied Materials

Applied Materials

Applied Materials

Applied Materials

Applied Materials

Films

Plasma TaNx using Unknown

Deposition Temperature Range = 150-350C

511292-99-2

7440-37-1

1333-74-0

Plasma TaNx using Unknown

Deposition Temperature Range = 150-350C

511292-99-2

1333-74-0

Thermal TaNx using Unknown

Deposition Temperature Range N/A

511292-99-2

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

-

Density

XRR, X-Ray Reflectivity

-

Dewetting

SEM, Scanning Electron Microscopy

-

Diffusion Barrier Properties

Four-point Probe

-

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

-

Conformality, Step Coverage

TEM, Transmission Electron Microscope

-

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

-

Substrates

Silicon

Keywords

Interconnect

Diffusion Barrier

Plasma vs Thermal Comparison

Notes

Unknown direct capacitively coupled plasma.

730



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