Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects

Type:
Conference Proceedings
Info:
ECS Transactions, 33 (2) 169-176 (2010)
Date:
2010-07-08
DOI:
http://dx.doi.org/10.1149/1.3485253

Author Information

Name Institution
Paul MaApplied Materials
Jiang LuApplied Materials
Joseph AubuchonApplied Materials
Tza-Jing GungApplied Materials
Mei ChangApplied Materials

Films

Plasma TaNx

Hardware used: Unknown
Tert-Butylimido,Tris(EthylMethylamino)Tantalum, Ta[N(CH3)(C2H5)]3[=NC(CH3)3], TBTEMT
CAS#: 511292-99-2
Where to buy precursor
Ar, Argon
CAS#: 7440-37-1
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range = 150-350C

Plasma TaNx

Hardware used: Unknown
Tert-Butylimido,Tris(EthylMethylamino)Tantalum, Ta[N(CH3)(C2H5)]3[=NC(CH3)3], TBTEMT
CAS#: 511292-99-2
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range = 150-350C

Thermal TaNx

Hardware used: Unknown
Tert-Butylimido,Tris(EthylMethylamino)Tantalum, Ta[N(CH3)(C2H5)]3[=NC(CH3)3], TBTEMT
CAS#: 511292-99-2
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Dewetting
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

Silicon

Notes

Unknown direct capacitively coupled plasma.
730