TaNx Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing TaNx films returned 35 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
2ALD TaN Barrier for Enhanced Performance with Low Contact Resistance for 14nm Technology Node Cu Interconnects
3Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
4Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
5Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
6Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
7Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
8Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
9Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
10Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
11Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
12High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
13High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
14Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
15Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
16Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
17Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
18Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
19Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
20Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
21Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
22Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
23Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
24Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
25Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
26Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
27Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
28Ru thin film grown on TaN by plasma enhanced atomic layer deposition
29Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
30Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
31The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
32The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
33The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
34Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
35Trilayer Tunnel Selectors for Memristor Memory Cells