TaNx Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing TaNx films returned 35 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
2Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
3Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
4High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
5Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
6Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
7Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
8High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
9Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
10Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
11Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
12The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
13Trilayer Tunnel Selectors for Memristor Memory Cells
14Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
15A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
16Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
17Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
18Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
19Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
20Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
21Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
22Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
23The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
24The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
25Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
26Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
27Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
28Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
29Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
30Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
31Ru thin film grown on TaN by plasma enhanced atomic layer deposition
32Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
33Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
34ALD TaN Barrier for Enhanced Performance with Low Contact Resistance for 14nm Technology Node Cu Interconnects
35Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect