TaNx Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing TaNx films returned 37 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
2Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
3Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
4Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
5Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
6Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
7Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
8Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
9Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
10Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
11Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
12Ru thin film grown on TaN by plasma enhanced atomic layer deposition
13The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
14The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
15Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
16Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
17Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
18Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
19Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
20Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
21High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
22Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
23Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
24Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
25Trilayer Tunnel Selectors for Memristor Memory Cells
26Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
27A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
28The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
29Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
30Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor
31ALD TaN Barrier for Enhanced Performance with Low Contact Resistance for 14nm Technology Node Cu Interconnects
32Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
33Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
34Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
35Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
36High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
37Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex