Ru thin film grown on TaN by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Thin Solid Films 517 (2009) 4689 - 4693
Date:
2009-03-02

Author Information

Name Institution
Qi XieFudan University
Yu-Long JiangFudan University
Jan MusschootGhent University
Davy DeduytscheGhent University
Christophe DetavernierGhent University
Ronald L. Van MeirhaegheGhent University
Sven Van den BergheBelgian Nuclear Research Centre SCK-CEN
Guo-Ping RuFudan University
Bing-Zong LiFudan University
Xin-Ping QuFudan University

Films

Plasma Ru


Plasma TaNx


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thermal Stability
Analysis: XRD, X-Ray Diffraction

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Substrates

Si(100)
TaN

Notes

756