Publication Information

Title: Ru thin film grown on TaN by plasma enhanced atomic layer deposition

Type: Journal

Info: Thin Solid Films 517 (2009) 4689 - 4693

Date: 2009-03-02

DOI: http://dx.doi.org/10.1016/j.tsf.2009.03.001

Author Information

Name

Institution

Fudan University

Fudan University

Ghent University

Ghent University

Ghent University

Ghent University

Belgian Nuclear Research Centre SCK-CEN

Fudan University

Fudan University

Fudan University

Films

Plasma Ru using Custom

Deposition Temperature Range = 100-270C

32992-96-4

7664-41-7

Plasma TaNx using Custom

Deposition Temperature = 200C

19824-59-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

VG Scientific ESCALAB 220iXL

Thermal Stability

XRD, X-Ray Diffraction

-

Diffusion Barrier Properties

XRD, X-Ray Diffraction

-

Thickness

XRR, X-Ray Reflectivity

Bruker D8 Advance

Resistivity, Sheet Resistance

Four-point Probe

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Microstructure

TEM, Transmission Electron Microscope

Philips CM200-FEG

Substrates

Si(100)

TaN

Keywords

Nucleation

Notes

756



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