PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum, CAS# 19824-59-0

Where to buy

NumberVendorRegionLink
1DOCK/CHEMICALSπŸ‡©πŸ‡ͺPentakis(dimethylamino)tantalum(V)
2GelestπŸ‡ΊπŸ‡ΈTantalum Pentakis(Dimethylamide)
3EreztechπŸ‡ΊπŸ‡ΈPDMAT
4EpiValenceπŸ‡¬πŸ‡§Tantalum dimethlyamide
5Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈPentakis(dimethylamino)tantalum(V), 99%

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 25 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
2Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
3TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
4Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
5Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
6In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition
7Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
8Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
9Ru thin film grown on TaN by plasma enhanced atomic layer deposition
10Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
11Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
12Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
13Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
14Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
15Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
16Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
17Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
18Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
19Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
20Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
21Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
22Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
23Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
24Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
25Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition