Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum, CAS# 19824-59-0

Where to buy

NumberVendorRegionLink
1Pegasus Chemicals🇬🇧Pentakis(dimethylamino)tantalum
2DOCK/CHEMICALS🇩🇪Pentakis(dimethylamido)tantalum
3Gelest🇺🇸Tantalum Pentakis(Dimethylamide)
4Ereztech🇺🇸PDMAT
5Strem Chemicals, Inc.🇺🇸Pentakis(dimethylamino)tantalum(V), 99%

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 25 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
2Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
3Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
4Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
5Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
6Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
7Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
8Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
9In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition
10Ru thin film grown on TaN by plasma enhanced atomic layer deposition
11Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
12Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
13Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
14Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
15Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
16Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
17Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
18Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
19Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
20Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
21Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
22Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
23Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
24TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
25Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition