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Atomic layer epitaxy of germanium
Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films
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Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
Type:
Journal
Info:
J. Vac. Sci. Technol. A 28(1), Jan/Feb 2010
Date:
2009-12-09
Author Information
| Name | Institution |
|---|---|
| Adriaan J. M. Mackus | Eindhoven University of Technology |
| S. B. S. Heil | Eindhoven University of Technology |
| E. Langereis | Eindhoven University of Technology |
| Harm C. M. Knoops | Eindhoven University of Technology |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma Al2O3
Plasma TiN
Film/Plasma Properties
Characteristic: OES
Analysis: OES, Optical Emission Spectroscopy
Substrates
Keywords
Notes
| 110 |