TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
Type:
Journal
Info:
Microelectronic Engineering 88 (2011) 646 - 650
Date:
2010-06-15
Author Information
| Name | Institution |
|---|---|
| Qi Xie | Ghent University |
| Davy Deduytsche | Ghent University |
| Jan Musschoot | Ghent University |
| Ronald L. Van Meirhaeghe | Ghent University |
| Christophe Detavernier | Ghent University |
| Shao-Feng Ding | Fudan University |
| Xin-Ping Qu | Fudan University |
Films
Plasma TaCN
Film/Plasma Properties
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Substrates
| Silicon |
| SiO2 |
Notes
| 1449 |