Publication Information

Title:
TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
Type:
Journal
Info:
Microelectronic Engineering 88 (2011) 646 - 650
Date:
2010-06-15

Author Information

Name Institution
Qi XieGhent University
Davy DeduytscheGhent University
Jan MusschootGhent University
Ronald L. Van MeirhaegheGhent University
Christophe DetavernierGhent University
Shao-Feng DingFudan University
Xin-Ping QuFudan University

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction

Substrates

Silicon
SiO2

Keywords

Diffusion Barrier

Notes

1449