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Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
Type:
Journal
Info:
Microelectronic Engineering 85 (2008) 2059 - 2063
Date:
2008-05-27
Author Information
| Name | Institution |
|---|---|
| Qi Xie | Fudan University |
| Jan Musschoot | Ghent University |
| Christophe Detavernier | Ghent University |
| Davy Deduytsche | Ghent University |
| Ronald L. Van Meirhaeghe | Ghent University |
| Sven Van den Berghe | Belgian Nuclear Research Centre SCK-CEN |
| Yu-Long Jiang | Fudan University |
| Guo-Ping Ru | Fudan University |
| Bing-Zong Li | Fudan University |
| Xin-Ping Qu | Fudan University |
Films
Plasma TaNx
Plasma TaNx
Film/Plasma Properties
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Substrates
| Si(100) |
Notes
| 1335 |