Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma

Type:
Journal
Info:
Microelectronic Engineering 85 (2008) 2059 - 2063
Date:
2008-05-27

Author Information

Name Institution
Qi XieFudan University
Jan MusschootGhent University
Christophe DetavernierGhent University
Davy DeduytscheGhent University
Ronald L. Van MeirhaegheGhent University
Sven Van den BergheBelgian Nuclear Research Centre SCK-CEN
Yu-Long JiangFudan University
Guo-Ping RuFudan University
Bing-Zong LiFudan University
Xin-Ping QuFudan University

Films

Plasma TaNx


Plasma TaNx


Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction

Substrates

Si(100)

Notes

1335