Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma

Type:
Journal
Info:
Microelectronic Engineering 85 (2008) 2059 - 2063
Date:
2008-05-27
DOI:
https://doi.org/10.1016/j.mee.2008.05.026

Author Information

Name Institution
Qi XieFudan University
Jan MusschootGhent University
Christophe DetavernierGhent University
Davy DeduytscheGhent University
Ronald L. Van MeirhaegheGhent University
Sven Van den BergheBelgian Nuclear Research Centre SCK-CEN
Yu-Long JiangFudan University
Guo-Ping RuFudan University
Bing-Zong LiFudan University
Xin-Ping QuFudan University

Films

Plasma TaNx

Hardware used: Custom Remote Inductively Coupled Plasma
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 50-400C

Plasma TaNx

Hardware used: Custom Remote Inductively Coupled Plasma
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 50-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Substrates

Si(100)

Notes

1335