Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
Type:
Journal
Info:
Chinese Journal of Materials Research Vol. 33 No. 1 Jan. 2019
Date:
2019-02-27
Author Information
Name | Institution |
---|---|
Yong-Ping Wang | Fudan University |
Zi-Jun Ding | Fudan University |
Bao Zhu | Fudan University |
Wen-Jun Liu | Fudan University |
Shi-Jin Ding | Fudan University |
Films
Plasma TaNx
Film/Plasma Properties
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Substrates
Silicon |
Notes
Paper text in Chinese, information derived from English abstract and figures. |
Picosun system inferred from 3000W plasma levels. |
1266 |