Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion

Type:
Journal
Info:
Chinese Journal of Materials Research Vol. 33 No. 1 Jan. 2019
Date:
2019-02-27
DOI:
http://dx.doi.org/10.11901/1005.3093.2017.799

Author Information

Name Institution
Yong-Ping WangFudan University
Zi-Jun DingFudan University
Bao ZhuFudan University
Wen-Jun LiuFudan University
Shi-Jin DingFudan University

Films

Plasma TaNx

Hardware used: Picosun R200
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 250-325C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension ICON

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Substrates

Silicon

Notes

Paper text in Chinese, information derived from English abstract and figures.
Picosun system inferred from 3000W plasma levels.
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