Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion

Type:
Journal
Info:
Chinese Journal of Materials Research Vol. 33 No. 1 Jan. 2019
Date:
2019-02-27

Author Information

Name Institution
Yong-Ping WangFudan University
Zi-Jun DingFudan University
Bao ZhuFudan University
Wen-Jun LiuFudan University
Shi-Jin DingFudan University

Films

Plasma TaNx


Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Substrates

Silicon

Keywords

Diffusion Barrier

Notes

Paper text in Chinese, information derived from English abstract and figures.
Picosun system inferred from 3000W plasma levels.
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