Publication Information

Title: Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion

Type: Journal

Info: Chinese Journal of Materials Research Vol. 33 No. 1 Jan. 2019

Date: 2019-02-27

DOI: http://dx.doi.org/10.11901/1005.3093.2017.799

Author Information

Name

Institution

Fudan University

Fudan University

Fudan University

Fudan University

Fudan University

Films

Plasma TaNx using Picosun R200

Deposition Temperature Range = 250-325C

19824-59-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Bruker Dimension ICON

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Kratos Analytical Axis Ultra DLD

Resistivity, Sheet Resistance

Four-point Probe

-

Density

XRR, X-Ray Reflectivity

Bruker D8 Discover

Substrates

Silicon

Keywords

Diffusion Barrier

Notes

Paper text in Chinese, information derived from English abstract and figures.

Picosun system inferred from 3000W plasma levels.

1266



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