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Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology B 23, 979-983 (2005)
Date:
2005-04-11
Author Information
| Name | Institution |
|---|---|
| Akira Furuya | Semiconductor Leading Edge Technologies Inc. |
| Hiroshi Tsuda | Semiconductor Leading Edge Technologies Inc. |
| Shinichi Ogawa | Semiconductor Leading Edge Technologies Inc. |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: XRF, X-Ray Fluorescence
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Adhesion
Analysis: Bending Test, Four Point Bend Delamination Test
Characteristic: Electrical Properties
Analysis: -
Substrates
| SiO2 |
Notes
| Films were 60%+ oxygen. |
| Precursor exposure and plasma exposure done in two different reactors without vacuum break. |
| 1264 |