Publication Information

Title:
Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology B 23, 979-983 (2005)
Date:
2005-04-11

Author Information

Name Institution
Akira FuruyaSemiconductor Leading Edge Technologies Inc.
Hiroshi TsudaSemiconductor Leading Edge Technologies Inc.
Shinichi OgawaSemiconductor Leading Edge Technologies Inc.

Films

Plasma TaNx


Film/Plasma Properties

Characteristic: Thickness
Analysis: XRF, X-Ray Fluorescence

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Adhesion
Analysis: Bending Test, Four Point Bend Delamination Test

Characteristic: Electrical Properties
Analysis: -

Substrates

SiO2

Keywords

Notes

Films were 60%+ oxygen.
Precursor exposure and plasma exposure done in two different reactors without vacuum break.
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