Publication Information

Title: Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition

Type: Journal

Info: Journal of Vacuum Science & Technology B 23, 979-983 (2005)

Date: 2005-04-11

DOI: http://dx.doi.org/10.1116/1.1926289

Author Information

Name

Institution

Semiconductor Leading Edge Technologies Inc.

Semiconductor Leading Edge Technologies Inc.

Semiconductor Leading Edge Technologies Inc.

Films

Plasma TaNx using Custom

Deposition Temperature = 275C

19824-59-0

1333-74-0

7440-59-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

XRF, X-Ray Fluorescence

-

Thickness

TEM, Transmission Electron Microscope

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Adhesion

Bending Test, Four Point Bend Delamination Test

-

Electrical Properties

Unknown

-

Substrates

SiO2

Keywords

Notes

Films were 60%+ oxygen.

Precursor exposure and plasma exposure done in two different reactors without vacuum break.

1264



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