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Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier

Type:
Journal
Info:
J. Vac. Sci. Technol. A 36(3), May/Jun 2018
Date:
2018-02-20
DOI:
http://dx.doi.org/10.1116/1.5002727

Author Information

Name Institution
Yong-Ping WangFudan University
Zi-Jun DingFudan University
Bao ZhuFudan University
Wen-Jun LiuFudan University
David Wei ZhangFudan University
Shi-Jin DingFudan University

Films

Plasma NiTaN

Hardware used: Unknown
Bis(cyclopentadienyl)nickel, Nickelocene, Cp2Ni
CAS#: 1271-28-9
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: Custom
Diagnostic: Custom

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension ICON

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Talos F200X

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: FEI Talos F200X

Substrates

Si(100)

Notes

1203