Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 26, 472-480 (2008)
Date:
2008-03-11
Author Information
Name | Institution |
---|---|
S. B. S. Heil | Eindhoven University of Technology |
Fred Roozeboom | Eindhoven University of Technology |
Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma Ta2O5
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Optical Properties
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Compositional Depth Profiling
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: Custom
Substrates
Si(100) |
Notes
1346 |