Publication Information

Title: Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants

Type: Journal

Info: J. Vac. Sci. Technol. B, Vol. 24, No. 5, Sep/Oct 2006

Date: 2006-08-01

DOI: http://dx.doi.org/10.1116/1.2345205

Author Information

Name

Institution

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Films

Plasma Ta2O5 using Custom ICP

Deposition Temperature Range = 100-500C

19824-59-0

7782-44-7

Thermal Ta2O5 using Custom ICP

Deposition Temperature Range = 150-500C

19824-59-0

7732-18-5

Thermal TaNx using Custom ICP

Deposition Temperature = 220C

19824-59-0

7664-41-7

Plasma TaNx using Custom ICP

Deposition Temperature Range = 150-325C

19824-59-0

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Rudolf AutoEL II

Thickness

RBS, Rutherford Backscattering Spectrometry

Unknown

Thickness

SEM, Scanning Electron Microscopy

Unknown

Microstructure

XRD, X-Ray Diffraction

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

Si(100)

Keywords

Notes

1164



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