Publication Information

Title:
Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Applied Physics 98, 014308 (2005)
Date:
2005-04-27

Author Information

Name Institution
Hyungjun KimPohang University of Science and Technology (POSTECH)
Christophe DetavernierIBM
O. van der StratenIBM
S. M. RossnagelIBM
A. J. KellockIBM
D.-G. ParkIBM

Films


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction

Characteristic: Diffusion Barrier Properties
Analysis: Optical Scattering

Characteristic: Diffusion Barrier Properties
Analysis: Four-point Probe

Substrates

Si(001)
SiO2

Keywords

Diffusion
Diffusion Barrier

Notes

1260