Publication Information

Title: Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition

Type: Journal

Info: Journal of Applied Physics 98, 014308 (2005)

Date: 2005-04-27

DOI: http://dx.doi.org/10.1063/1.1935761

Author Information

Name

Institution

Pohang University of Science and Technology (POSTECH)

IBM

IBM

IBM

IBM

IBM

Films

Plasma TaNx using Custom ICP

Deposition Temperature Range = 150-325C

19824-59-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Thickness

RBS, Rutherford Backscattering Spectrometry

-

Images

TEM, Transmission Electron Microscope

JEOL JEM 4000EX

Thickness

TEM, Transmission Electron Microscope

JEOL JEM 4000EX

Conformality, Step Coverage

TEM, Transmission Electron Microscope

JEOL JEM 4000EX

Diffusion Barrier Properties

XRD, X-Ray Diffraction

Synchrotron

Diffusion Barrier Properties

Optical Scattering

-

Diffusion Barrier Properties

Four-point Probe

-

Substrates

Si(001)

SiO2

Keywords

Diffusion

Diffusion Barrier

Notes

1260



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