Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Applied Physics 98, 014308 (2005)
Date:
2005-04-27
DOI:
http://dx.doi.org/10.1063/1.1935761

Author Information

Name Institution
Hyungjun KimPohang University of Science and Technology (POSTECH)
Christophe DetavernierIBM
O. van der StratenIBM
S. M. RossnagelIBM
A. J. KellockIBM
D.-G. ParkIBM

Films

Plasma TaNx

Hardware used: Custom Remote Inductively Coupled Plasma
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
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N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range = 150-325C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM 4000EX

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM 4000EX

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM 4000EX

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Diagnostic: Synchrotron

Characteristic: Diffusion Barrier Properties
Analysis: Optical Scattering
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: Four-point Probe
Diagnostic: -

Substrates

Si(001)
SiO2

Notes

1260