
Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Applied Physics 98, 014308 (2005)
Date:
2005-04-27
Author Information
Name | Institution |
---|---|
Hyungjun Kim | Pohang University of Science and Technology (POSTECH) |
Christophe Detavernier | IBM |
O. van der Straten | IBM |
S. M. Rossnagel | IBM |
A. J. Kellock | IBM |
D.-G. Park | IBM |
Films
Plasma TaNx
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Characteristic: Diffusion Barrier Properties
Analysis: Optical Scattering
Characteristic: Diffusion Barrier Properties
Analysis: Four-point Probe
Substrates
Si(001) |
SiO2 |
Notes
1260 |