Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Microelectronic Engineering 211 (2019) 13-17
Date:
2019-03-14
DOI:
https://doi.org/10.1016/j.mee.2019.03.005

Author Information

Name Institution
Johanna ReifTechnische Universität Dresden
Martin KnautTechnische Universität Dresden
Sebastian KillgeTechnische Universität Dresden
Matthias AlbertTechnische Universität Dresden
Johann W. BarthaTechnische Universität Dresden

Films

Plasma TaCN

Hardware used: FHR-300-ALD
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Ar, Argon
CAS#: 7440-37-1
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Nucleation
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Si with native oxide
SiCOH
SiO2

Notes

1567