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Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
Experimental and theoretical determination of the role of ions in atomic layer annealing
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition
Type:
Journal
Info:
Microelectronic Engineering 211 (2019) 13-17
Date:
2019-03-14
Author Information
| Name | Institution |
|---|---|
| Johanna Reif | Technische Universität Dresden |
| Martin Knaut | Technische Universität Dresden |
| Sebastian Killge | Technische Universität Dresden |
| Matthias Albert | Technische Universität Dresden |
| Johann W. Bartha | Technische Universität Dresden |
Films
Plasma TaCN
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Nucleation
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Si with native oxide |
| SiCOH |
| SiO2 |
Keywords
| Nucleation |
| Substrate Plasma Pretreatment |
Notes
| 1567 |