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Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
Type:
Journal
Info:
Japanese Journal of Applied Physics Vol. 46, No. 5B, 2007, pp. 3224-3228
Date:
2007-03-08
Author Information
| Name | Institution |
|---|---|
| Wan Joo Maeng | Pohang University of Science and Technology (POSTECH) |
| Jaewoong Lee | Yonsei University |
| Jae Min Myoung | Yonsei University |
| Hyungjun Kim | Pohang University of Science and Technology (POSTECH) |
Films
Thermal Ta2O5
Plasma Ta2O5
Plasma TaON
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(001) |
Notes
| 1318 |