Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9 (6) G191-G194 (2006)
Date:
2006-03-28

Author Information

Name Institution
Wan Joo MaengPohang University of Science and Technology (POSTECH)
Hyungjun KimPohang University of Science and Technology (POSTECH)

Films


Thermal Ta2O5




Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(001)

Keywords

High-k Dielectric Thin Films
Plasma vs Thermal Comparison

Notes

All substrates received HF dip. Substrates for electrical testing also received RCA clean.
Nice plot of plasma and thermal Ta2O5 GPC vs temperature showing minima at 200-250C and higher GPC at lower and higher temperatures.
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