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Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
Type:
Journal
Info:
J. Vac. Sci. Technol. A 37(1), Jan/Feb 2019
Date:
2018-12-11
Author Information
| Name | Institution |
|---|---|
| Igor Krylov | Technion-Israel Institute of Technology |
| Xianbin Xu | Technion-Israel Institute of Technology |
| Kamira Weinfeld | Technion-Israel Institute of Technology |
| Valentina Korchnoy | Technion-Israel Institute of Technology |
| Dan Ritter | Technion-Israel Institute of Technology |
| Moshe Eizenberg | Technion-Israel Institute of Technology |
Films
Plasma TiN
Plasma TiN
Plasma TiN
Plasma TaNx
Plasma ZrN
Film/Plasma Properties
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| SiO2 |
Notes
| 1211 |