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Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources

Type:
Journal
Info:
J. Vac. Sci. Technol. A 37(1), Jan/Feb 2019
Date:
2018-12-11
DOI:
http://dx.doi.org/10.1116/1.5075491

Author Information

Name Institution
Igor KrylovTechnion-Israel Institute of Technology
Xianbin XuTechnion-Israel Institute of Technology
Kamira WeinfeldTechnion-Israel Institute of Technology
Valentina KorchnoyTechnion-Israel Institute of Technology
Dan RitterTechnion-Israel Institute of Technology
Moshe EizenbergTechnion-Israel Institute of Technology

Films

Plasma TiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 300C

Plasma TiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Plasma TiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 300C

Plasma TaNx

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 300C

Plasma ZrN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku Smartlab

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku Smartlab

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku Smartlab

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Versaprobe III

Substrates

SiO2

Notes

1211