Publication Information

Title: Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources

Type: Journal

Info: J. Vac. Sci. Technol. A 37(1), Jan/Feb 2019

Date: 2018-12-11

DOI: http://dx.doi.org/10.1116/1.5075491

Author Information

Name

Institution

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Films

Deposition Temperature = 300C

3275-24-9

7727-37-9

Deposition Temperature = 300C

3275-24-9

7664-41-7

Deposition Temperature = 300C

3275-24-9

1333-74-0

Deposition Temperature = 300C

19824-59-0

1333-74-0

Deposition Temperature = 300C

175923-04-3

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

-

Thickness

XRR, X-Ray Reflectivity

Rigaku Smartlab

Density

XRR, X-Ray Reflectivity

Rigaku Smartlab

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku Smartlab

Thickness

TEM, Transmission Electron Microscope

-

Images

TEM, Transmission Electron Microscope

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

-

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

PHI Versaprobe III

Substrates

SiO2

Keywords

Notes

1211



Shortcuts



© 2014-2019 plasma-ald.com