Publication Information

Title: Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources

Type: Journal

Info: J. Vac. Sci. Technol. A 37(1), Jan/Feb 2019

Date: 2018-12-11

DOI: http://dx.doi.org/10.1116/1.5075491

Author Information

Name

Institution

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Films

Deposition Temperature = 300C

3275-24-9

7727-37-9

Deposition Temperature = 300C

3275-24-9

7664-41-7

Deposition Temperature = 300C

3275-24-9

1333-74-0

Deposition Temperature = 300C

19824-59-0

1333-74-0

Deposition Temperature = 300C

175923-04-3

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Thickness

XRR, X-Ray Reflectivity

Rigaku Smartlab

Density

XRR, X-Ray Reflectivity

Rigaku Smartlab

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku Smartlab

Thickness

TEM, Transmission Electron Microscope

Unknown

Images

TEM, Transmission Electron Microscope

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

PHI Versaprobe III

Substrates

SiO2

Keywords

Notes

1211



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