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The publication database currently has 1658 entries.
204 Films
274 Precursors
78 Dep Hardware Sets
253 Characteristics
91 Theses
5093 Authors

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Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition Optimization of Y2O3 dopant concentration of yttria stabilized zirconia thin film electrolyte prepared by plasma enhanced atomic layer deposition for high performance thin film solid oxide fuel cells Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy Innovative remote plasma source for atomic layer deposition for GaN devices

Dan Ritter Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Dan Ritter returned 8 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
2A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
3Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
4Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
5Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
6Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
7Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
8Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition

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