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Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 060905 (2019)
Date:
2019-09-04
Author Information
| Name | Institution |
|---|---|
| Igor Krylov | Tower Semiconductor Ltd. |
| Xianbin Xu | Technion-Israel Institute of Technology |
| Yuanshen Qi | Technion-Israel Institute of Technology |
| Kamira Weinfeld | Technion-Israel Institute of Technology |
| Valentina Korchnoy | Technion-Israel Institute of Technology |
| Moshe Eizenberg | Technion-Israel Institute of Technology |
| Dan Ritter | Technion-Israel Institute of Technology |
Films
Plasma TiN
Plasma TiN
Plasma TiN
Film/Plasma Properties
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Substrates
| Al2O3 |
| HfO2 |
| WO3 |
| MoOx |
| SiO2 |
| TiO2 |
| Ta2O5 |
| Sapphire |
| MgO |
| SrTiO3 |
Notes
| 1593 |