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Publication Information

Title: A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs

Type: Journal

Info: Journal of Applied Physics 119, 084507 (2016)

Date: 2016-02-11

DOI: http://dx.doi.org/10.1063/1.4942657

Author Information

Name

Institution

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Films

Deposition Temperature = 300C

0-0-0

7664-41-7

Deposition Temperature = 300C

0-0-0

7664-41-7

Deposition Temperature = 300C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo VG Sigma Probe

Chemical Composition, Impurities

TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

ION TOF TofSIMS 5

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Dispersion

C-V, Capacitance-Voltage Measurements

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Substrates

InGaAs

Keywords

Notes

773

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