A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
Type:
Journal
Info:
Journal of Applied Physics 119, 084507 (2016)
Date:
2016-02-11
Author Information
Name | Institution |
---|---|
Igor Krylov | Technion-Israel Institute of Technology |
Boaz Pokroy | Technion-Israel Institute of Technology |
Dan Ritter | Technion-Israel Institute of Technology |
Moshe Eizenberg | Technion-Israel Institute of Technology |
Films
Thermal AlN
Plasma AlN
Thermal Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dispersion
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Substrates
InGaAs |
Notes
773 |