Publication Information

Title: Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition

Type: Journal

Info: J. Vac. Sci. Technol. A 36(6), Nov/Dec 2018

Date: 2018-10-18

DOI: http://dx.doi.org/10.1116/1.5057761

Author Information

Name

Institution

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

National Scientific and Technical Research Council (CONICET)/National Technology University (UTN-FRBA)

National Scientific and Technical Research Council (CONICET)/National Technology University (UTN-FRBA)

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Films

Deposition Temperature = 300C

3275-24-9

7727-37-9

Deposition Temperature = 300C

3275-24-9

7664-41-7

Deposition Temperature = 300C

3275-24-9

7727-37-9

1333-74-0

Deposition Temperature = 300C

3275-24-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Thickness

XRR, X-Ray Reflectivity

Rigaku Smartlab

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku Smartlab

Thickness

TEM, Transmission Electron Microscope

Unknown

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

PHI Versaprobe III

Bonding States

XPS, X-ray Photoelectron Spectroscopy

PHI Versaprobe III

Leakage Current

I-V, Current-Voltage Measurements

Agilent 4155C Semiconductor Parameter Analyzer

Breakdown Voltage

I-V, Current-Voltage Measurements

Agilent 4155C Semiconductor Parameter Analyzer

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Substrates

SiO2

Keywords

Notes

1197



Shortcuts



© 2014-2019 plasma-ald.com