Publication Information

Title:
Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
Type:
Journal
Info:
Journal of Vacuum Science & Technology B 35, 011205 (2017)
Date:
2016-12-12

Author Information

Name Institution
Igor KrylovTechnion-Israel Institute of Technology
Boaz PokroyTechnion-Israel Institute of Technology
Dan RitterTechnion-Israel Institute of Technology
Moshe EizenbergTechnion-Israel Institute of Technology

Films

Thermal Al2O3


Plasma AlN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

InGaAs

Keywords

Notes

885