Publication Information

Title: Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications

Type: Journal

Info: Journal of Vacuum Science & Technology B 35, 011205 (2017)

Date: 2016-12-12

DOI: http://dx.doi.org/10.1116/1.4973300

Author Information

Name

Institution

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Films

Deposition Temperature = 300C

75-24-1

7732-18-5

Deposition Temperature = 300C

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Thickness

TEM, Transmission Electron Microscope

FEI Titan S 80-300 TEM/STEM

Images

TEM, Transmission Electron Microscope

FEI Titan S 80-300 TEM/STEM

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

FEI Titan S 80-300 TEM/STEM

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

Physical Electronics PHI 5600 ESCA

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Agilent E4980A Precision LCR Meter

Capacitance

C-V, Capacitance-Voltage Measurements

Agilent E4980A Precision LCR Meter

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Agilent E4980A Precision LCR Meter

Substrates

InGaAs

Keywords

Notes

885



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