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Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
Type:
Journal
Info:
Journal of Vacuum Science & Technology B 35, 011205 (2017)
Date:
2016-12-12
Author Information
| Name | Institution |
|---|---|
| Igor Krylov | Technion-Israel Institute of Technology |
| Boaz Pokroy | Technion-Israel Institute of Technology |
| Dan Ritter | Technion-Israel Institute of Technology |
| Moshe Eizenberg | Technion-Israel Institute of Technology |
Films
Thermal Al2O3
Plasma AlN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| InGaAs |
Notes
| 885 |