Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect

Type:
Journal
Info:
Journal of Applied Physics 128, 065301 (2020)
Date:
2020-07-24

Author Information

Name Institution
Igor KrylovTower Semiconductor Ltd.
Valentina KorchnoyTechnion-Israel Institute of Technology
Xianbin XuTechnion-Israel Institute of Technology
Kamira WeinfeldTechnion-Israel Institute of Technology
Eilam YalonTechnion-Israel Institute of Technology
Dan RitterTechnion-Israel Institute of Technology
Moshe EizenbergTechnion-Israel Institute of Technology

Films






Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Custom

Characteristic: TCR, Temperature Coefficient of Resistivity
Analysis: Custom

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Substrates

SiO2

Keywords

Notes

1594