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Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
Type:
Journal
Info:
J. Vac. Sci. Technol. A, Vol. 36, No. 5, Sep/Oct 2018
Date:
2018-07-02
Author Information
| Name | Institution |
|---|---|
| Igor Krylov | Technion-Israel Institute of Technology |
| Ekaterina Zoubenko | Technion-Israel Institute of Technology |
| Kamira Weinfeld | Technion-Israel Institute of Technology |
| Yaron Kauffmann | Technion-Israel Institute of Technology |
| Xianbin Xu | Technion-Israel Institute of Technology |
| Dan Ritter | Technion-Israel Institute of Technology |
| Moshe Eizenberg | Technion-Israel Institute of Technology |
Films
Plasma TiN
Thermal Al2O3
Film/Plasma Properties
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Compositional Depth Profiling
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| SiO2 |
| Al2O3 |
Notes
| 1200 |