Publication Information

Title:
Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
Type:
Journal
Info:
J. Vac. Sci. Technol. A, Vol. 36, No. 5, Sep/Oct 2018
Date:
2018-07-02

Author Information

Name Institution
Igor KrylovTechnion-Israel Institute of Technology
Ekaterina ZoubenkoTechnion-Israel Institute of Technology
Kamira WeinfeldTechnion-Israel Institute of Technology
Yaron KauffmannTechnion-Israel Institute of Technology
Xianbin XuTechnion-Israel Institute of Technology
Dan RitterTechnion-Israel Institute of Technology
Moshe EizenbergTechnion-Israel Institute of Technology

Films


Thermal Al2O3


Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Compositional Depth Profiling
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

SiO2
Al2O3

Keywords

Notes

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