Publication Information

Title: Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor

Type: Journal

Info: J. Vac. Sci. Technol. A, Vol. 36, No. 5, Sep/Oct 2018

Date: 2018-07-02

DOI: http://dx.doi.org/10.1116/1.5035422

Author Information

Name

Institution

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Technion-Israel Institute of Technology

Films

Deposition Temperature Range = 200-400C

3275-24-9

7727-37-9

Deposition Temperature = 300C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

-

Thickness

XRR, X-Ray Reflectivity

Rigaku Smartlab

Density

XRR, X-Ray Reflectivity

Rigaku Smartlab

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku Smartlab

Thickness

TEM, Transmission Electron Microscope

FEI Titan G2

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Asylum Research MFP-3D

Compositional Depth Profiling

EDS, EDX, Energy Dispersive X-ray Spectroscopy

FEI Titan G2

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

PHI Versaprobe III

Bonding States

XPS, X-ray Photoelectron Spectroscopy

PHI Versaprobe III

Leakage Current

I-V, Current-Voltage Measurements

Agilent 4155C Semiconductor Parameter Analyzer

Substrates

SiO2

Al2O3

Keywords

Notes

1200



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