A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors

Type:
Journal
Info:
Journal of Applied Physics 120, 124505 (2016)
Date:
2016-09-02
DOI:
http://dx.doi.org/10.1063/1.4962855

Author Information

Name Institution
Igor KrylovTechnion-Israel Institute of Technology
Boaz PokroyTechnion-Israel Institute of Technology
Moshe EizenbergTechnion-Israel Institute of Technology
Dan RitterTechnion-Israel Institute of Technology

Films

Thermal Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Savannah
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 270C

Thermal HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Savannah
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 270C

Thermal HfAlOx

Hardware used: Veeco - Ultratech - Cambridge NanoTech Savannah
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 270C

Thermal Al2O3

Hardware used: Picosun SUNALE R-150B
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 270C

Thermal Al2O3

Hardware used: Picosun SUNALE R-150B
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 270C

Plasma Al2O3

Hardware used: Picosun SUNALE R-150B
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 270C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG Sigma Probe

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan

Characteristic: Chemical Composition, Impurities
Analysis: HAADF, High-Angle Annular Dark Field
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Dispersion
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4140

Substrates

InGaAs

Keywords

Plasma vs Thermal Comparison

Notes

791