Title: A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
Type: Journal
Info: Journal of Applied Physics 120, 124505 (2016)
Date: 2016-09-02
DOI: http://dx.doi.org/10.1063/1.4962855
Name
Institution
Technion-Israel Institute of Technology
Technion-Israel Institute of Technology
Technion-Israel Institute of Technology
Technion-Israel Institute of Technology
75-24-1
19962-11-9
75-24-1
19962-11-9
75-24-1
75-24-1
75-24-1
Characteristic
Analysis
Diagnostic
Thickness
Ellipsometry
Unknown
Chemical Composition, Impurities
XPS, X-ray Photoelectron Spectroscopy
Thermo VG Sigma Probe
Images
TEM, Transmission Electron Microscope
FEI Titan
Chemical Composition, Impurities
HAADF, High-Angle Annular Dark Field
Unknown
Compositional Depth Profiling
EDS, EDX, Energy Dispersive X-ray Spectroscopy
Unknown
Flat Band Voltage
C-V, Capacitance-Voltage Measurements
Agilent E4980A Precision LCR Meter
Interface Trap Density
C-V, Capacitance-Voltage Measurements
Agilent E4980A Precision LCR Meter
Dielectric Constant, Permittivity
C-V, Capacitance-Voltage Measurements
Agilent E4980A Precision LCR Meter
Hysteresis
C-V, Capacitance-Voltage Measurements
Agilent E4980A Precision LCR Meter
Dispersion
C-V, Capacitance-Voltage Measurements
Agilent E4980A Precision LCR Meter
Leakage Current
I-V, Current-Voltage Measurements
HP 4140
InGaAs
Plasma vs Thermal Comparison
791
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