A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors

Type:
Journal
Info:
Journal of Applied Physics 120, 124505 (2016)
Date:
2016-09-02

Author Information

Name Institution
Igor KrylovTechnion-Israel Institute of Technology
Boaz PokroyTechnion-Israel Institute of Technology
Moshe EizenbergTechnion-Israel Institute of Technology
Dan RitterTechnion-Israel Institute of Technology

Films

Thermal Al2O3




Thermal Al2O3


Thermal Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: HAADF, High-Angle Annular Dark Field

Characteristic: Compositional Depth Profiling
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dispersion
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

InGaAs

Keywords

Plasma vs Thermal Comparison

Notes

791