A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
Type:
Journal
Info:
Journal of Applied Physics 120, 124505 (2016)
Date:
2016-09-02
Author Information
| Name | Institution |
|---|---|
| Igor Krylov | Technion-Israel Institute of Technology |
| Boaz Pokroy | Technion-Israel Institute of Technology |
| Moshe Eizenberg | Technion-Israel Institute of Technology |
| Dan Ritter | Technion-Israel Institute of Technology |
Films
Thermal Al2O3
Thermal HfO2
Thermal HfAlOx
Thermal Al2O3
Thermal Al2O3
Plasma Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: HAADF, High-Angle Annular Dark Field
Characteristic: Compositional Depth Profiling
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dispersion
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| InGaAs |
Notes
| 791 |