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Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 55, No. 1, pp. 32-37
Date:
2008-08-26
Author Information
| Name | Institution |
|---|---|
| Woo-Hee Kim | Pohang University of Science and Technology (POSTECH) |
| Sang-Joon Park | Pohang University of Science and Technology (POSTECH) |
| Doyoung Kim | Pohang University of Science and Technology (POSTECH) |
| Hyungjun Kim | Pohang University of Science and Technology (POSTECH) |
Films
Thermal Ru
Plasma Ta2O5
Film/Plasma Properties
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Silicon |
| SiO2 |
| Ta2O5 |
Notes
| 736 |