Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 55, No. 1, pp. 32-37
Date:
2008-08-26

Author Information

Name Institution
Woo-Hee KimPohang University of Science and Technology (POSTECH)
Sang-Joon ParkPohang University of Science and Technology (POSTECH)
Doyoung KimPohang University of Science and Technology (POSTECH)
Hyungjun KimPohang University of Science and Technology (POSTECH)

Films

Thermal Ru



Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Silicon
SiO2
Ta2O5

Keywords

Notes

736