Publication Information

Title: Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 55, No. 1, pp. 32-37

Date: 2008-08-26

DOI: http://oasis.postech.ac.kr/handle/2014.oak/28708

Author Information

Name

Institution

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Films

Thermal Ru using Unknown

Deposition Temperature Range = 300-350C

32992-96-4

7782-44-7

Plasma Ta2O5 using Unknown

Deposition Temperature = 300C

19824-59-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

SEM, Scanning Electron Microscopy

-

Resistivity, Sheet Resistance

Four-point Probe

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Substrates

Silicon

SiO2

Ta2O5

Keywords

Notes

736



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