Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode

Type:
Journal
Info:
Microelectronic Engineering 85 (2008) 39-44
Date:
2007-02-12

Author Information

Name Institution
Sang-Joon ParkPohang University of Science and Technology (POSTECH)
Woo-Hee KimPohang University of Science and Technology (POSTECH)
Han-Bo-Ram LeePohang University of Science and Technology (POSTECH)
Wan Joo MaengPohang University of Science and Technology (POSTECH)
Hyungjun KimPohang University of Science and Technology (POSTECH)

Films

Thermal Ru


Plasma Ru


Thermal Ru


Plasma Ru


Thermal TaNx


Plasma Ta2O5


Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

TaN
Ta2O5
Silicon
SiO2

Keywords

Gate Metal
Copper Electroplating
Nucleation

Notes

Si samples HF-dipped
Ru patterned in Cl2 RIE plasma
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