Publication Information

Title: Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode

Type: Journal

Info: Microelectronic Engineering 85 (2008) 39-44

Date: 2007-02-12

DOI: http://dx.doi.org/10.1016/j.mee.2007.01.239

Author Information

Name

Institution

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Films

Thermal Ru using Custom

Deposition Temperature Range N/A

1287-13-4

7782-44-7

Plasma Ru using Custom

Deposition Temperature Range N/A

1287-13-4

7664-41-7

Thermal Ru using Custom

Deposition Temperature Range N/A

32992-96-4

7782-44-7

Plasma Ru using Custom

Deposition Temperature Range N/A

32992-96-4

7664-41-7

Thermal TaNx using Custom

Deposition Temperature Range N/A

19824-59-0

7664-41-7

Plasma Ta2O5 using Custom

Deposition Temperature Range N/A

19824-59-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

SEM, Scanning Electron Microscopy

Unknown

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Microstructure

XRD, X-Ray Diffraction

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Work Function

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Fixed Charge

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Substrates

TaN

Ta2O5

Silicon

SiO2

Keywords

Gate Metal

Copper Electroplating

Nucleation

Notes

Si samples HF-dipped

Ru patterned in Cl2 RIE plasma

105



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