Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
Type:
Journal
Info:
Microelectronic Engineering 85 (2008) 39-44
Date:
2007-02-12
Author Information
| Name | Institution |
|---|---|
| Sang-Joon Park | Pohang University of Science and Technology (POSTECH) |
| Woo-Hee Kim | Pohang University of Science and Technology (POSTECH) |
| Han-Bo-Ram Lee | Pohang University of Science and Technology (POSTECH) |
| Wan Joo Maeng | Pohang University of Science and Technology (POSTECH) |
| Hyungjun Kim | Pohang University of Science and Technology (POSTECH) |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| TaN |
| Ta2O5 |
| Silicon |
| SiO2 |
Notes
| Si samples HF-dipped |
| Ru patterned in Cl2 RIE plasma |
| 105 |