Publication Information

Title:
Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
Type:
Journal
Info:
Journal of Applied Physics 102, 083517 (2007)
Date:
2007-08-29

Author Information

Name Institution
E. LangereisEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology
Adriaan J. M. MackusEindhoven University of Technology
Fred RoozeboomNXP Semiconductors Research
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films




Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Substrates

Si with native oxide

Keywords

Notes

1332