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Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
Type:
Journal
Info:
Journal of Applied Physics 102, 083517 (2007)
Date:
2007-08-29
Author Information
| Name | Institution |
|---|---|
| E. Langereis | Eindhoven University of Technology |
| Harm C. M. Knoops | Eindhoven University of Technology |
| Adriaan J. M. Mackus | Eindhoven University of Technology |
| Fred Roozeboom | NXP Semiconductors Research |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma TaNx
Plasma TaNx
Plasma TaNx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Substrates
| Si with native oxide |
Notes
| 1332 |