Publication Information

Title: Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas

Type: Journal

Info: Journal of Vacuum Science & Technology A 30, 01A101 (2012)

Date: 2011-06-22

DOI: http://dx.doi.org/10.1116/1.3625565

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Plasma TaNx using Custom ICP

Deposition Temperature Range = 150-225C

19824-59-0

1333-74-0

Plasma TaNx using Custom ICP

Deposition Temperature Range = 150-225C

19824-59-0

1333-74-0

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Gas Phase Species

QMS, Quadrupole Mass Spectrometer

Pfeiffer QMS 200

Gas Phase Species

OES, Optical Emission Spectroscopy

Ocean Optics USB 2000

Thickness

Ellipsometry

-

Substrates

Keywords

Reaction Mechanism

Notes

Contains nice list of publication references discussing plasma ALD reaction mechanisms.

663



Shortcuts



© 2014-2020 plasma-ald.com