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Publication Information

Title: Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas

Type: Journal

Info: Journal of Vacuum Science & Technology A 30, 01A101 (2012)

Date: 2011-06-22

DOI: http://dx.doi.org/10.1116/1.3625565

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Plasma TaNx using Custom ICP

Deposition Temperature Range = 150-225C

19824-59-0

1333-74-0

Plasma TaNx using Custom ICP

Deposition Temperature Range = 150-225C

19824-59-0

1333-74-0

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Gas Phase Species

QMS, Quadrupole Mass Spectrometer

Pfeiffer QMS 200

Gas Phase Species

OES, Optical Emission Spectroscopy

Ocean Optics USB 2000

Thickness

Ellipsometry

Unknown

Substrates

Keywords

Reaction Mechanism

Notes

Contains nice list of publication references discussing plasma ALD reaction mechanisms.

663


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