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Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 30, 01A101 (2012)
Date:
2011-06-22
DOI:
http://dx.doi.org/10.1116/1.3625565

Author Information

Name Institution
Harm C. M. KnoopsEindhoven University of Technology
E. LangereisEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma TaNx

Hardware used: Custom Remote Inductively Coupled Plasma
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 150-225C

Plasma TaNx

Hardware used: Custom Remote Inductively Coupled Plasma
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
H2, Hydrogen
CAS#: 1333-74-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 150-225C

Film/Plasma Properties

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: Pfeiffer QMS 200

Characteristic: Gas Phase Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Ocean Optics USB 2000

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Substrates

Notes

Contains nice list of publication references discussing plasma ALD reaction mechanisms.
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