Publication Information

Title:
High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
Type:
Journal
Info:
Applied Physics Letters 90, 102101 (2007)
Date:
2007-01-17

Author Information

Name Institution
Raghavasimhan SreenivasanStanford University
Takuya SugawaraStanford University
Krishna C. SaraswatStanford University
Paul C. McIntyreStanford University

Films

Plasma TaNx


Film/Plasma Properties

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: HAADF, High-Angle Annular Dark Field

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Substrates

SiO2

Keywords

Notes

1472