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High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
Type:
Journal
Info:
Applied Physics Letters 90, 102101 (2007)
Date:
2007-01-17
Author Information
| Name | Institution |
|---|---|
| Raghavasimhan Sreenivasan | Stanford University |
| Takuya Sugawara | Stanford University |
| Krishna C. Saraswat | Stanford University |
| Paul C. McIntyre | Stanford University |
Films
Plasma TaNx
Film/Plasma Properties
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: HAADF, High-Angle Annular Dark Field
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Substrates
| SiO2 |
Notes
| 1472 |