Publication Information

Title: Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals

Type: Journal

Info: Journal of Vacuum Science & Technology A 27, (2009)

Date: 2009-05-04

DOI: http://dx.doi.org/10.1116/1.3147215

Author Information

Name

Institution

University of Colorado, Boulder

University of Colorado, Boulder

Films

Plasma TaNx using Custom Hot-wire

Deposition Temperature = 170C

169896-41-7

1333-74-0

Thermal Al2O3 using Custom

Deposition Temperature = 170C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Nucleation

AES, Auger Electron Spectroscopy

Perkin Elmer PHI10-155

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Perkin Elmer PHI10-155

Thickness

AES, Auger Electron Spectroscopy

Perkin Elmer PHI10-155

Substrates

Al2O3

Si(100)

Keywords

Nucleation

Interconnect

Diffusion Barrier

Notes

748



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