Publication Information

Title:
Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 27, (2009)
Date:
2009-05-04

Author Information

Name Institution
G. Bruce Rayner, Jr.University of Colorado, Boulder
Steven GeorgeUniversity of Colorado, Boulder

Films


Thermal Al2O3


Film/Plasma Properties

Characteristic: Nucleation
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Thickness
Analysis: AES, Auger Electron Spectroscopy

Substrates

Al2O3
Si(100)

Keywords

Nucleation
Interconnect
Diffusion Barrier

Notes

748