TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3], CAS# 169896-41-7

Where to buy

NumberVendorRegionLink
1EreztechπŸ‡ΊπŸ‡ΈTris(diethylamido) (tert-butylimido) tantalum(V)
2Pegasus ChemicalsπŸ‡¬πŸ‡§Tris(diethylamido)(tert-butylimido)tantalum(V)
3Sigma-Aldrich, Co. LLCπŸ‡ΊπŸ‡ΈTris(diethylamido)(tert-butylimido)tantalum(V)
4Strem Chemicals, Inc.πŸ‡ΊπŸ‡Έ(t-Butylimido)tris(diethylamino)tantalum(V), min. 98% (99.99%-Ta)
5GelestπŸ‡ΊπŸ‡ΈTris(Diethylamino)(t-Butylimino) Tantalum
6EpiValenceπŸ‡¬πŸ‡§Tantalum tert-butylimido trisdiethylamide
7Alfa AesarπŸ‡ΊπŸ‡ΈTantalum tris(diethylamido)-tert-butylimide, 99.99% (metals basis)
8Santa Cruz BiotechnologyπŸ‡ΊπŸ‡ΈTris(diethylamido)(tert-butylimido)tantalum(V)
9Alfa AesarπŸ‡ΊπŸ‡ΈTert-butylimido tris(diethylamido) tantalum

www.plasma-ald.com does not endorse any chemical suppliers. These links are provided for the benefit of our users. If a link goes bad, let us know.

If you would like your company's precursor products listed, or your existing listing changed or removed, send me an email.


Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 26 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
2Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
3Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
4Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
5Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
6The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
7Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
8Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
9Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
10Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
11A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
12Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
13Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
14High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
15Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
16High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
17Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
18Evaluation of plasma parameters on PEALD deposited TaCN
19The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
20Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
21Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
22Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
23Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
24Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
25Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
26Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications