TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3], CAS# 169896-41-7

Where to buy

NumberVendorRegionLink
1Santa Cruz Biotechnology🇺🇸Tris(diethylamido)(tert-butylimido)tantalum(V)
2Gelest🇺🇸Tris(Diethylamino)(t-Butylimino) Tantalum
3Strem Chemicals, Inc.🇺🇸(t-Butylimido)tris(diethylamino)tantalum(V), min. 98% (99.99%-Ta)
4Alfa Aesar🇺🇸Tert-butylimido tris(diethylamido) tantalum
5Sigma-Aldrich, Co. LLC🇺🇸Tris(diethylamido)(tert-butylimido)tantalum(V)
6Pegasus Chemicals🇬🇧Tris(diethylamido)(tert-butylimido)tantalum(V)
7Alfa Aesar🇺🇸Tantalum tris(diethylamido)-tert-butylimide, 99.99% (metals basis)
8Ereztech🇺🇸Tris(diethylamido) (tert-butylimido) tantalum(V)

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 27 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
2Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
3Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
4Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
5Evaluation of plasma parameters on PEALD deposited TaCN
6High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
7Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
8Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor
9Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
10Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
11Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
12High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
13A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
14Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
15Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
16Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
17Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
18Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
19Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
20The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
21Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
22Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
23Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
24Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
25Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
26The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
27Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method