A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu

Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (8) H589-H594 (2008)
Date:
2008-05-20
DOI:
http://dx.doi.org/10.1149/1.2940447

Author Information

Name Institution
Soo-Hyun KimYeungnam University
Hyun Tae KimYeungnam University
Sung-Soo YimSeoul National University
Do-Joong LeeSeoul National University
Ki-Su KimSeoul National University
Hyun-Mi KimSeoul National University
Ki-Bum KimSeoul National University
Hyunchul SohnYonsei University

Films

Plasma TaCN

Hardware used: Novellus Systems INOVA xT
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 300C

Plasma Ru

Hardware used: Unknown
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: JEOL JEM-3000F

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM-3000F

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM-3000F

Substrates

Silicon
TaCN

Notes

1162