Publication Information

Title: A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu

Type: Journal

Info: Journal of The Electrochemical Society, 155 (8) H589-H594 (2008)

Date: 2008-05-20

DOI: http://dx.doi.org/10.1149/1.2940447

Author Information

Name

Institution

Yeungnam University

Yeungnam University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Yonsei University

Films

Deposition Temperature = 300C

169896-41-7

1333-74-0

Plasma Ru using Unknown

Deposition Temperature Range N/A

32992-96-4

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Unknown

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

JEOL JEM-3000F

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

Unknown

Images

TEM, Transmission Electron Microscope

JEOL JEM-3000F

Microstructure

TEM, Transmission Electron Microscope

JEOL JEM-3000F

Substrates

Silicon

TaCN

Keywords

Diffusion Barrier

Notes

1162



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