Publication Information

Title:
Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
Type:
Journal
Info:
Journal of The Electrochemical Society, 156 (9) H734-H739 (2009)
Date:
2009-06-03

Author Information

Name Institution
Liqi WuState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany

Films


Plasma Ru

Hardware used: Custom


CAS#: 7664-41-7

Plasma TaNx


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: NRA, Nuclear Reaction Analysis

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Microstructure
Analysis: FIB, Focused Ion Beam

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Adhesion
Analysis: Tape Test

Substrates

Ru
Ta
TaN
SiO2

Keywords

Interconnect
Seed Layer

Notes

744