Publication Information

Title:
Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 4 (4) C17-C19 (2001)
Date:
2001-02-09

Author Information

Name Institution
Jin-Seong ParkKorea Advanced Institute of Science and Technology
Min-Jung LeeKorea Advanced Institute of Science and Technology
Choon-Soo LeeGenitech Co., Ltd.
Sang-Won KangKorea Advanced Institute of Science and Technology

Films


Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Substrates

Keywords

Notes

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