Publication Information

Title: Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 45, No. 4, pp. 1069-1073

Date: 2004-06-04

DOI: http://www.jkps.or.kr/journal/view.html?uid

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Pusan National University

Films

Thermal TaNx using Custom

Deposition Temperature = 250C

169896-41-7

7664-41-7

Plasma TaNx using Custom

Deposition Temperature = 250C

169896-41-7

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

-

Barrier Characteristics

Four-point Probe

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Chemical Binding

XPS, X-ray Photoelectron Spectroscopy

-

Microstructure

TEM, Transmission Electron Microscope

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

-

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

-

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

-

Barrier Characteristics

SEM, Scanning Electron Microscopy

-

Substrates

Si(100)

Keywords

Diffusion Barrier

Plasma vs Thermal Comparison

Notes

1195



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