Publication Information

Title: Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 45, No. 4, pp. 1069-1073

Date: 2004-06-04

DOI: http://www.jkps.or.kr/journal/view.html?uid

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Pusan National University

Films

Thermal TaNx using Custom

Deposition Temperature = 250C

169896-41-7

7664-41-7

Plasma TaNx using Custom

Deposition Temperature = 250C

169896-41-7

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Barrier Characteristics

Four-point Probe

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Chemical Binding

XPS, X-ray Photoelectron Spectroscopy

Unknown

Microstructure

TEM, Transmission Electron Microscope

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

Unknown

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

Unknown

Barrier Characteristics

SEM, Scanning Electron Microscopy

Unknown

Substrates

Si(100)

Keywords

Diffusion Barrier

Plasma vs Thermal Comparison

Notes

1195



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