Publication Information

Title:
High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
Type:
Conference Proceedings
Info:
High-k oxides by ALD, At Wrocław, Poland
Date:
2018-03-01

Author Information

Name Institution
Sebastian KillgeTechnische Universität Dresden
Johanna ReifTechnische Universität Dresden
Volker NeumannTechnische Universität Dresden
Marcel JunigeUniversity of Colorado, Boulder
Marion GeidelTechnische Universität Dresden
Christian WenzelTechnische Universität Dresden
Martin KnautTechnische Universität Dresden
Matthias AlbertTechnische Universität Dresden
Johann W. BarthaTechnische Universität Dresden

Films

Thermal TaNx


Plasma Ta


Thermal Ru

Hardware used: Unknown


CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Adhesion
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Substrates

SiO2

Keywords

Interconnect
Diffusion Barrier
Seed Layer

Notes

1281