High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating

Type:
Conference Proceedings
Info:
High-k oxides by ALD, At Wrocław, Poland
Date:
2018-03-01
DOI:
https://www.researchgate.net/publication/323700656_High-aspect-ratio_TSVs_with_thALDPEALD_tantalum-based_barrier_layer_thALD_Ruthenium_seed_layer_and_subsequent_copper_electroplating

Author Information

Name Institution
Sebastian KillgeTechnische Universität Dresden
Johanna ReifTechnische Universität Dresden
Volker NeumannTechnische Universität Dresden
Marcel JunigeUniversity of Colorado, Boulder
Marion GeidelTechnische Universität Dresden
Christian WenzelTechnische Universität Dresden
Martin KnautTechnische Universität Dresden
Matthias AlbertTechnische Universität Dresden
Johann W. BarthaTechnische Universität Dresden

Films

Thermal TaNx

Hardware used: Unknown
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 250C

Plasma Ta

Hardware used: Unknown
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 200C

Thermal Ru

Hardware used: Unknown
Ethylcyclopentadienyl pyrrolyl ruthenium
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Adhesion
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

SiO2

Notes

1281