Publication Information

Title: High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating

Type: Conference Proceedings

Info: High-k oxides by ALD, At Wrocław, Poland

Date: 2018-03-01

DOI: https://www.researchgate.net/publication/323700656_High-aspect-ratio_TSVs_with_thALDPEALD_tantalum-based_barrier_layer_thALD_Ruthenium_seed_layer_and_subsequent_copper_electroplating

Author Information

Name

Institution

Technische Universität Dresden

Technische Universität Dresden

Technische Universität Dresden

University of Colorado, Boulder

Technische Universität Dresden

Technische Universität Dresden

Technische Universität Dresden

Technische Universität Dresden

Technische Universität Dresden

Films

Thermal TaNx using Unknown

Deposition Temperature = 250C

169896-41-7

7664-41-7

Plasma Ta using Unknown

Deposition Temperature = 200C

169896-41-7

1333-74-0

Thermal Ru using Unknown

Deposition Temperature = 250C

0-0-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

Unknown

Adhesion

SEM, Scanning Electron Microscopy

Unknown

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

Unknown

Substrates

SiO2

Keywords

Interconnect

Diffusion Barrier

Seed Layer

Notes

1281



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