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Publication Information

Title: Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications

Type: Journal

Info: ECS Transactions, 58 (10) 223-233 (2013)

Date: 2013-10-18

DOI: http://dx.doi.org/10.1149/05810.0223ecst

Author Information

Name

Institution

STMicroelectronics

STMicroelectronics

Grenoble-CNRS-Université Joseph Fourier

Grenoble-CNRS-Université Joseph Fourier

STMicroelectronics

STMicroelectronics

Grenoble-CNRS-Université Joseph Fourier

Films

Plasma ZrO2 using ASM EmerALD

Deposition Temperature = 250C

33271-88-4

7782-44-7

Plasma TaZrO2 using ASM EmerALD

Deposition Temperature = 250C

33271-88-4

169896-41-7

7782-44-7

Plasma GeZrO2 using ASM EmerALD

Deposition Temperature = 250C

33271-88-4

7344-40-3

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

EPMA, Electron Probe Micro Analyzer

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Breakdown Voltage

I-V, Current-Voltage Measurements

Unknown

Substrates

Si(100)

TiN

Keywords

Notes

624



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