Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications

Type:
Journal
Info:
ECS Transactions, 58 (10) 223-233 (2013)
Date:
2013-10-18
DOI:
http://dx.doi.org/10.1149/05810.0223ecst

Author Information

Name Institution
Julien FerrandSTMicroelectronics
Virginie BeuginSTMicroelectronics
Alexandre CrisciGrenoble-CNRS-Université Joseph Fourier
Stéphane CoindeauGrenoble-CNRS-Université Joseph Fourier
Simon JeannotSTMicroelectronics
Mickaël Gros-JeanSTMicroelectronics
Elisabeth BlanquetGrenoble-CNRS-Université Joseph Fourier

Films

Plasma ZrO2

Hardware used: ASM EmerALD
Tris(dimethylamino)cyclopentadienyl Zirconium, CpZr(NMe2)3, Air Liquide ZyALDTM
CAS#: 33271-88-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma TaZrO2

Hardware used: ASM EmerALD
Tris(dimethylamino)cyclopentadienyl Zirconium, CpZr(NMe2)3, Air Liquide ZyALDTM
CAS#: 33271-88-4
Where to buy precursor
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma GeZrO2

Hardware used: ASM EmerALD
Tris(dimethylamino)cyclopentadienyl Zirconium, CpZr(NMe2)3, Air Liquide ZyALDTM
CAS#: 33271-88-4
Where to buy precursor
TDMAGe, (Me2N)4Ge, [(CH3)2N]4Ge, Tetrakis(DiMethylAmido) Germanium, Germanium Dimethylamide
CAS#: 7344-40-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: EPMA, Electron Probe Micro Analyzer
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Si(100)
TiN

Notes

624