Tris(dimethylamino)cyclopentadienyl Zirconium, CpZr(NMe2)3, Air Liquide ZyALDTM, CAS# 33271-88-4

Where to buy

NumberVendorRegionLink
1EreztechπŸ‡ΊπŸ‡ΈCyclopentadienyl tris(dimethylamino) zirconium(IV)
2DOCK/CHEMICALSπŸ‡©πŸ‡ͺTris(dimethylamido)(cyclopentadienyl)zirconium

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 8 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
2Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
3Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
4Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
5Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
6ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium
7Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
8Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films