Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


Tris(dimethylamino)cyclopentadienyl Zirconium, CpZr(NMe2)3, Air Liquide ZyALDTM, CAS# 33271-88-4

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 8 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
2Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
3Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
4Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
5Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
6Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
7ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium
8Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications